ISSN 2394-5125
 

Review Article 


STUDY OF FORMATION OF CLUSTERS OF ATOMS OF GADOLINIUM IN SILICON

B.E. Egamberdiyev, S.A. Tachilin, A.R.Toshev, F.M. Isroilov, M.Sh. Dehkanov.

Abstract
The paper presents technology for a phased low-temperature diffusion doping of silicon with gadolinium that helps engineer clusters of impurity atoms distributed across the entire bulk material. The authors have shown that no surface erosion or formation of alloys and silicides on the surface are detected while applying low temperature diffusion technology which normally takes place during high-temperature diffusion doping. The authors revealed the increased thermal and radiation resistance of silicon samples containing clusters of impurity atoms of gadolinium.

Key words: gadolinium, technology, cluster, erosion, low temperature diffusion, doping, heat resistance, degradation.


 
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How to Cite this Article
Pubmed Style

B.E. Egamberdiyev, S.A. Tachilin, A.R.Toshev, F.M. Isroilov, M.Sh. Dehkanov. STUDY OF FORMATION OF CLUSTERS OF ATOMS OF GADOLINIUM IN SILICON. JCR. 2020; 7(3): 297-301. doi:10.31838/jcr.07.03.60


Web Style

B.E. Egamberdiyev, S.A. Tachilin, A.R.Toshev, F.M. Isroilov, M.Sh. Dehkanov. STUDY OF FORMATION OF CLUSTERS OF ATOMS OF GADOLINIUM IN SILICON. http://www.jcreview.com/?mno=91557 [Access: May 31, 2021]. doi:10.31838/jcr.07.03.60


AMA (American Medical Association) Style

B.E. Egamberdiyev, S.A. Tachilin, A.R.Toshev, F.M. Isroilov, M.Sh. Dehkanov. STUDY OF FORMATION OF CLUSTERS OF ATOMS OF GADOLINIUM IN SILICON. JCR. 2020; 7(3): 297-301. doi:10.31838/jcr.07.03.60



Vancouver/ICMJE Style

B.E. Egamberdiyev, S.A. Tachilin, A.R.Toshev, F.M. Isroilov, M.Sh. Dehkanov. STUDY OF FORMATION OF CLUSTERS OF ATOMS OF GADOLINIUM IN SILICON. JCR. (2020), [cited May 31, 2021]; 7(3): 297-301. doi:10.31838/jcr.07.03.60



Harvard Style

B.E. Egamberdiyev, S.A. Tachilin, A.R.Toshev, F.M. Isroilov, M.Sh. Dehkanov (2020) STUDY OF FORMATION OF CLUSTERS OF ATOMS OF GADOLINIUM IN SILICON. JCR, 7 (3), 297-301. doi:10.31838/jcr.07.03.60



Turabian Style

B.E. Egamberdiyev, S.A. Tachilin, A.R.Toshev, F.M. Isroilov, M.Sh. Dehkanov. 2020. STUDY OF FORMATION OF CLUSTERS OF ATOMS OF GADOLINIUM IN SILICON. Journal of Critical Reviews, 7 (3), 297-301. doi:10.31838/jcr.07.03.60



Chicago Style

B.E. Egamberdiyev, S.A. Tachilin, A.R.Toshev, F.M. Isroilov, M.Sh. Dehkanov. "STUDY OF FORMATION OF CLUSTERS OF ATOMS OF GADOLINIUM IN SILICON." Journal of Critical Reviews 7 (2020), 297-301. doi:10.31838/jcr.07.03.60



MLA (The Modern Language Association) Style

B.E. Egamberdiyev, S.A. Tachilin, A.R.Toshev, F.M. Isroilov, M.Sh. Dehkanov. "STUDY OF FORMATION OF CLUSTERS OF ATOMS OF GADOLINIUM IN SILICON." Journal of Critical Reviews 7.3 (2020), 297-301. Print. doi:10.31838/jcr.07.03.60



APA (American Psychological Association) Style

B.E. Egamberdiyev, S.A. Tachilin, A.R.Toshev, F.M. Isroilov, M.Sh. Dehkanov (2020) STUDY OF FORMATION OF CLUSTERS OF ATOMS OF GADOLINIUM IN SILICON. Journal of Critical Reviews, 7 (3), 297-301. doi:10.31838/jcr.07.03.60