ISSN 2394-5125
 

Review Article 


THE EFFECT OF ANNEALING ON THE CRYSTAL STRUCTURE OF THE SURFACE OF SILICON DOPED WITH COBALT IONS

Baxrom Egamberdiyev, Amin Mallayev, Mamat Rakhmatov, Asror Ramazanov, Shohruh Sayfulloyev.

Abstract
The paper reports results of the study of the distribution profiles of implanted cobalt atoms in silicon as a function of the radiation dose and annealing temperature that was performed by applying the Rutherford backscattering spectroscopy (RBS). The results obtained are in good concordance with similar data obtained by the technique of secondary-ion mass spectroscopy (SIMS). The effects of thermal annealing on the distribution of cobalt, and in particular oxygen were studied. The authors strongly suggest that under certain heat treatment conditions and by applying specific radiation doses, the so-called epitaxial silicides will build on the surface of a single crystal, which can play the role of conducting or metal layers. One could consider the RBS method for analysis of both the topological distribution of dopants and the interaction of impurities.

Key words: impurities, profiles, influence, thermal annealing, implanted atoms, thin layers, depth, radiation doses.


 
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How to Cite this Article
Pubmed Style

Baxrom Egamberdiyev, Amin Mallayev, Mamat Rakhmatov, Asror Ramazanov, Shohruh Sayfulloyev. THE EFFECT OF ANNEALING ON THE CRYSTAL STRUCTURE OF THE SURFACE OF SILICON DOPED WITH COBALT IONS. JCR. 2020; 7(3): 302-306. doi:10.31838/jcr.07.03.61


Web Style

Baxrom Egamberdiyev, Amin Mallayev, Mamat Rakhmatov, Asror Ramazanov, Shohruh Sayfulloyev. THE EFFECT OF ANNEALING ON THE CRYSTAL STRUCTURE OF THE SURFACE OF SILICON DOPED WITH COBALT IONS. http://www.jcreview.com/?mno=91558 [Access: June 01, 2021]. doi:10.31838/jcr.07.03.61


AMA (American Medical Association) Style

Baxrom Egamberdiyev, Amin Mallayev, Mamat Rakhmatov, Asror Ramazanov, Shohruh Sayfulloyev. THE EFFECT OF ANNEALING ON THE CRYSTAL STRUCTURE OF THE SURFACE OF SILICON DOPED WITH COBALT IONS. JCR. 2020; 7(3): 302-306. doi:10.31838/jcr.07.03.61



Vancouver/ICMJE Style

Baxrom Egamberdiyev, Amin Mallayev, Mamat Rakhmatov, Asror Ramazanov, Shohruh Sayfulloyev. THE EFFECT OF ANNEALING ON THE CRYSTAL STRUCTURE OF THE SURFACE OF SILICON DOPED WITH COBALT IONS. JCR. (2020), [cited June 01, 2021]; 7(3): 302-306. doi:10.31838/jcr.07.03.61



Harvard Style

Baxrom Egamberdiyev, Amin Mallayev, Mamat Rakhmatov, Asror Ramazanov, Shohruh Sayfulloyev (2020) THE EFFECT OF ANNEALING ON THE CRYSTAL STRUCTURE OF THE SURFACE OF SILICON DOPED WITH COBALT IONS. JCR, 7 (3), 302-306. doi:10.31838/jcr.07.03.61



Turabian Style

Baxrom Egamberdiyev, Amin Mallayev, Mamat Rakhmatov, Asror Ramazanov, Shohruh Sayfulloyev. 2020. THE EFFECT OF ANNEALING ON THE CRYSTAL STRUCTURE OF THE SURFACE OF SILICON DOPED WITH COBALT IONS. Journal of Critical Reviews, 7 (3), 302-306. doi:10.31838/jcr.07.03.61



Chicago Style

Baxrom Egamberdiyev, Amin Mallayev, Mamat Rakhmatov, Asror Ramazanov, Shohruh Sayfulloyev. "THE EFFECT OF ANNEALING ON THE CRYSTAL STRUCTURE OF THE SURFACE OF SILICON DOPED WITH COBALT IONS." Journal of Critical Reviews 7 (2020), 302-306. doi:10.31838/jcr.07.03.61



MLA (The Modern Language Association) Style

Baxrom Egamberdiyev, Amin Mallayev, Mamat Rakhmatov, Asror Ramazanov, Shohruh Sayfulloyev. "THE EFFECT OF ANNEALING ON THE CRYSTAL STRUCTURE OF THE SURFACE OF SILICON DOPED WITH COBALT IONS." Journal of Critical Reviews 7.3 (2020), 302-306. Print. doi:10.31838/jcr.07.03.61



APA (American Psychological Association) Style

Baxrom Egamberdiyev, Amin Mallayev, Mamat Rakhmatov, Asror Ramazanov, Shohruh Sayfulloyev (2020) THE EFFECT OF ANNEALING ON THE CRYSTAL STRUCTURE OF THE SURFACE OF SILICON DOPED WITH COBALT IONS. Journal of Critical Reviews, 7 (3), 302-306. doi:10.31838/jcr.07.03.61