ISSN 2394-5125
 

Research Article 


Performance analysis of Double Gate GAA Nanowire FET with different high-k gate oxide materials

Prasad M, U B Mahadevaswamy, Ayesha Sultana.

Abstract
In proposed work, gate oxide engineered for Gate All around Nanowire FET is purposed for low power digital circuitry. Proposed device has a gate oxide geometry having high-k with SiO2, HfO2 and Al2O3 respectively. Leakage currents are reduced with gate oxide high-k of HfO2 as compared with Al2O3 and SiO2. An improvement is observed in ON to OFF-state current ratio and an impressive decline in drain induced barrier lowering (DIBL) with HfO2 as gate oxide GAA NWFET as compared to SiO2 and Al2O3 gate oxide structure at same physical dimensions. Further, with HfO2 gate oxide device has been found to have better ION/IOFF ratio, higher trans-conductance, lowered DIBL and an optimum sub-threshold slope as compared to other gate oxide device.

Key words: Double gate, High-K dilectric, Short channel effects, Sub-threshold Slope,Junctionless, N-type, P-type.


 
ARTICLE TOOLS
Abstract
PDF Fulltext
How to cite this articleHow to cite this article
Citation Tools
Related Records
 Articles by Prasad M
Articles by U B Mahadevaswamy
Articles by Ayesha Sultana
on Google
on Google Scholar


How to Cite this Article
Pubmed Style

Prasad M, U B Mahadevaswamy, Ayesha Sultana. Performance analysis of Double Gate GAA Nanowire FET with different high-k gate oxide materials. JCR. 2020; 7(17): 1922-1931. doi:10.31838/jcr.07.17.239


Web Style

Prasad M, U B Mahadevaswamy, Ayesha Sultana. Performance analysis of Double Gate GAA Nanowire FET with different high-k gate oxide materials. http://www.jcreview.com/?mno=40299 [Access: May 31, 2021]. doi:10.31838/jcr.07.17.239


AMA (American Medical Association) Style

Prasad M, U B Mahadevaswamy, Ayesha Sultana. Performance analysis of Double Gate GAA Nanowire FET with different high-k gate oxide materials. JCR. 2020; 7(17): 1922-1931. doi:10.31838/jcr.07.17.239



Vancouver/ICMJE Style

Prasad M, U B Mahadevaswamy, Ayesha Sultana. Performance analysis of Double Gate GAA Nanowire FET with different high-k gate oxide materials. JCR. (2020), [cited May 31, 2021]; 7(17): 1922-1931. doi:10.31838/jcr.07.17.239



Harvard Style

Prasad M, U B Mahadevaswamy, Ayesha Sultana (2020) Performance analysis of Double Gate GAA Nanowire FET with different high-k gate oxide materials. JCR, 7 (17), 1922-1931. doi:10.31838/jcr.07.17.239



Turabian Style

Prasad M, U B Mahadevaswamy, Ayesha Sultana. 2020. Performance analysis of Double Gate GAA Nanowire FET with different high-k gate oxide materials. Journal of Critical Reviews, 7 (17), 1922-1931. doi:10.31838/jcr.07.17.239



Chicago Style

Prasad M, U B Mahadevaswamy, Ayesha Sultana. "Performance analysis of Double Gate GAA Nanowire FET with different high-k gate oxide materials." Journal of Critical Reviews 7 (2020), 1922-1931. doi:10.31838/jcr.07.17.239



MLA (The Modern Language Association) Style

Prasad M, U B Mahadevaswamy, Ayesha Sultana. "Performance analysis of Double Gate GAA Nanowire FET with different high-k gate oxide materials." Journal of Critical Reviews 7.17 (2020), 1922-1931. Print. doi:10.31838/jcr.07.17.239



APA (American Psychological Association) Style

Prasad M, U B Mahadevaswamy, Ayesha Sultana (2020) Performance analysis of Double Gate GAA Nanowire FET with different high-k gate oxide materials. Journal of Critical Reviews, 7 (17), 1922-1931. doi:10.31838/jcr.07.17.239