ISSN 2394-5125
 

Research Article 


PERFORMANCE EVALUATION OF 10T SRAM CELL STRUCTURES AT ADIABATIC TECHNIQUE

M VAMSI KRISHNA. ALLU, GUNDRU SUJATHA, KOTHA LAVANYA.

Abstract
Memory is a data storage system that is commonly used to preserve data as a machine memory on an integrated circuit built
on a semiconductor. It is manufactured in different styles and technologies. Many other current semi-conductor cognitive
devices are installed that require random access, and access to the data can be rendered in any random order in an efficient
way. Random Static Access Memories (SRAM) is a form of semi-conductor storage memory that uses a flip flop to store
each bit. There are 6 transistors in the shape of cross-connected inverters. This cell consists of two stable states that show 0
and 1. During reading and typing activities, two additional input transistors control entry to the storage cell. Within the
CMOS circuits it is important to dissipate power from the short circuit such that there are paths directly to the ground from
VDD. The adiabatic technique can overcome this disadvantage. Tanner EDA is the method for extracting the tests. The
power produced for the traditional Memory cell is 2.2mW and the adiabatic technique suggested is 0.3mW

Key words: CMOS, Random Static Access Memories (SRAM)


 
ARTICLE TOOLS
Abstract
PDF Fulltext
How to cite this articleHow to cite this article
Citation Tools
Related Records
 Articles by M VAMSI KRISHNA. ALLU
Articles by GUNDRU SUJATHA
Articles by KOTHA LAVANYA
on Google
on Google Scholar


How to Cite this Article
Pubmed Style

M VAMSI KRISHNA. ALLU, GUNDRU SUJATHA , KOTHA LAVANYA. PERFORMANCE EVALUATION OF 10T SRAM CELL STRUCTURES AT ADIABATIC TECHNIQUE. JCR. 2020; 7(17): 2957-2964. doi:10.31838/jcr.07.17.374


Web Style

M VAMSI KRISHNA. ALLU, GUNDRU SUJATHA , KOTHA LAVANYA. PERFORMANCE EVALUATION OF 10T SRAM CELL STRUCTURES AT ADIABATIC TECHNIQUE. http://www.jcreview.com/?mno=115489 [Access: May 30, 2021]. doi:10.31838/jcr.07.17.374


AMA (American Medical Association) Style

M VAMSI KRISHNA. ALLU, GUNDRU SUJATHA , KOTHA LAVANYA. PERFORMANCE EVALUATION OF 10T SRAM CELL STRUCTURES AT ADIABATIC TECHNIQUE. JCR. 2020; 7(17): 2957-2964. doi:10.31838/jcr.07.17.374



Vancouver/ICMJE Style

M VAMSI KRISHNA. ALLU, GUNDRU SUJATHA , KOTHA LAVANYA. PERFORMANCE EVALUATION OF 10T SRAM CELL STRUCTURES AT ADIABATIC TECHNIQUE. JCR. (2020), [cited May 30, 2021]; 7(17): 2957-2964. doi:10.31838/jcr.07.17.374



Harvard Style

M VAMSI KRISHNA. ALLU, GUNDRU SUJATHA , KOTHA LAVANYA (2020) PERFORMANCE EVALUATION OF 10T SRAM CELL STRUCTURES AT ADIABATIC TECHNIQUE. JCR, 7 (17), 2957-2964. doi:10.31838/jcr.07.17.374



Turabian Style

M VAMSI KRISHNA. ALLU, GUNDRU SUJATHA , KOTHA LAVANYA. 2020. PERFORMANCE EVALUATION OF 10T SRAM CELL STRUCTURES AT ADIABATIC TECHNIQUE. Journal of Critical Reviews, 7 (17), 2957-2964. doi:10.31838/jcr.07.17.374



Chicago Style

M VAMSI KRISHNA. ALLU, GUNDRU SUJATHA , KOTHA LAVANYA. "PERFORMANCE EVALUATION OF 10T SRAM CELL STRUCTURES AT ADIABATIC TECHNIQUE." Journal of Critical Reviews 7 (2020), 2957-2964. doi:10.31838/jcr.07.17.374



MLA (The Modern Language Association) Style

M VAMSI KRISHNA. ALLU, GUNDRU SUJATHA , KOTHA LAVANYA. "PERFORMANCE EVALUATION OF 10T SRAM CELL STRUCTURES AT ADIABATIC TECHNIQUE." Journal of Critical Reviews 7.17 (2020), 2957-2964. Print. doi:10.31838/jcr.07.17.374



APA (American Psychological Association) Style

M VAMSI KRISHNA. ALLU, GUNDRU SUJATHA , KOTHA LAVANYA (2020) PERFORMANCE EVALUATION OF 10T SRAM CELL STRUCTURES AT ADIABATIC TECHNIQUE. Journal of Critical Reviews, 7 (17), 2957-2964. doi:10.31838/jcr.07.17.374